Samsung’S New Ssds Run Infinitely
Samsung has unveiled a new series of Solid State Drives (SSDs) PCIe Gen4, which use advanced software to achieve maximum performance. In particular, the fail-in-place (FIP) technology provides the “endless” operation of SSDs.
Samsung FIP allows the drive to continue to work normally even when errors occur at the chip level. In the past, damage to just one of several hundred NAND chips meant replacing the entire SSD, which led to system downtime and additional costs. SSDs with integrated Samsung FIP software identify a failed chip, scan for data corruption, and then transfer information to working chips. For example, if a malfunction is detected in any of the 512 NAND chips inside an SSD with a capacity of 30.72 TB, the FIP software automatically activates the error handling algorithms, while maintaining a high and stable performance of the drive itself.
SSD virtualization technology allows you to split one drive up to 64 times into smaller drives, providing independent virtual workspaces for multiple users. With this software, cloud storage providers optimize the competitiveness of the product and can provide services for more users with the same amount of resources. Virtualization technology also allows SSDs to perform a number of tasks that are typically assigned to server processors, such as single-root I / O virtualization. This requires fewer server processors and solid state drives, which reduces the server footprint at higher efficiency.
“We are expanding the market for premium solid state drives by combining high speed and power with revolutionary software solutions. We plan to introduce additional innovations based on our sixth-generation V-NAND, which will help drive further growth of SSDs in the global market, ”said Kye Hyun Kyung, Executive Vice President, Memory Solution Product Development at Samsung Electronics.
V-NAND’s machine learning technology helps you accurately predict and verify cell characteristics, as well as identify any chip problems with Big Data Analysis. This ensures reliable storage of information, since an increase in drive speed creates problems when reading and checking data using ultra-fast voltage pulses.